Significantly enhanced energy storage performance in multi-layer SrTiO3-based films via introducing a PZT polarization layer

Abstract

SrTiO3 paraelectrics, characterised by low electrical hysteresis loss, have been extensively employed in capacitor dielectric energy storage films. However, their inherent low polarization strength limits further enhancement of energy storage density. This paper presents an STM/PZT/STM (SPS) multilayer heterostructure comprising a linear SrTi0.99Mn0.01O3(STM) paraelectric layer and a PbZrxTi(1−x)O3 (PZT) ferroelectric layer. By synergistically regulating the Zr4+/Ti4+ ratio and layer count within the PZT polarization layer, the multilayer film integrates STM's low-loss properties with PZT's high polarization advantage. Results indicate that when the Zr4+/Ti4+ ratio in PZT reaches 80/20 and the layer count increases to four layers (SP4S), the composite film's polarization behaviour evolves from a linear paraelectric towards a relaxor-like ferroelectric character. At this stage, the saturated polarization of the SP4S film significantly increases to 39.18 µC cm−2, which is 7.6 times that of STM films, while retaining an exceptionally low residual polarization (1.21 µC cm−2). Consequently, the SP4S film achieves a high energy storage density of 52.98 J cm−3 and an energy storage efficiency of 86.08%, markedly outperforming existing SrTiO3-based energy storage dielectrics. Furthermore, the SP4S film exhibits excellent fatigue resistance, temperature stability, and frequency stability, demonstrating promising application prospects.

Graphical abstract: Significantly enhanced energy storage performance in multi-layer SrTiO3-based films via introducing a PZT polarization layer

Supplementary files

Article information

Article type
Paper
Submitted
07 Nov 2025
Accepted
21 Jan 2026
First published
23 Jan 2026

J. Mater. Chem. A, 2026, Advance Article

Significantly enhanced energy storage performance in multi-layer SrTiO3-based films via introducing a PZT polarization layer

X. Zhang, S. Sun, C. Yin, X. Wang, Y. Zhang, Z. Xiong, C. Zhang, Y. Zhang, T. Zhang and Q. Chi, J. Mater. Chem. A, 2026, Advance Article , DOI: 10.1039/D5TA09059H

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements