Defect-assisted vertical proton channels in highly oriented bismuth strontium tantalum oxide nanosheet laminar films

Abstract

Two-dimensional oxide nanosheets are regarded as a new class of inorganic proton conductors, particularly when assembled into highly oriented laminar films. However, c-axis oriented architectures typically exhibit strong proton transport anisotropy, with in-plane conductivity exceeding out-of-plane values by several orders of magnitude. Enhancing out-of-plane conductivities is therefore essential for practical electrochemical device applications. Here, we investigate anisotropic proton conduction in highly oriented laminar films assembled from A-site-deficient [Sr0.70Bi0.210.10Ta2O7]2− (□: A-site-vacancy) nanosheets and vacancy-free [SrTa2O7]2− nanosheets, enabling a direct comparison of vacancy-regulated proton transport. At 100 °C and 100% relative humidity, the A-site-deficient films exhibit high in-plane and out-of-plane proton conductivities of 6.95 × 10−2 and 2.24 × 10−5 S cm−1, respectively, giving an anisotropy ratio (σ in-plane/σ out-of-plane) of ∼3.1 × 103. In contrast, the vacancy-free films show in-plane and out-of-plane proton conductivities of 4.30 × 10−2 and 5.76 × 10−6 S cm−1, respectively, yielding a larger anisotropy ratio of ∼7.5 × 103. Despite having essentially identical geometrical proton migration distances, the A-site-deficient films exhibit ∼5-fold higher out-of-plane proton conductivity than their vacancy-free counterparts, leading to a marked reduction in transport anisotropy. This enhancement is attributed to defect-assisted interlayer proton hopping mediated by A-site vacancies, which act as proton-conduction channels that shorten migration distances and enable continuous out-of-plane hydrogen-bond networks. The observed H/D isotope effect and low activation energies further support a hydration-assisted Grotthuss-type proton conduction mechanism. These findings establish that atomic-scale A-site vacancy engineering combined with nanosheet self-assembly is a powerful strategy for constructing highly oriented inorganic proton-conducting membranes with suppressed transport anisotropy, providing new design principles for advanced electrochemical energy-conversion devices.

Graphical abstract: Defect-assisted vertical proton channels in highly oriented bismuth strontium tantalum oxide nanosheet laminar films

Supplementary files

Article information

Article type
Paper
Submitted
18 Feb 2026
Accepted
07 Apr 2026
First published
23 Apr 2026

Nanoscale, 2026, Advance Article

Defect-assisted vertical proton channels in highly oriented bismuth strontium tantalum oxide nanosheet laminar films

X. Sun, M. A. Rahman, S. Tomatsu, Y. Sakuda, K. Hatakeyama and S. Ida, Nanoscale, 2026, Advance Article , DOI: 10.1039/D6NR00706F

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