Thickness-dependent spin Hall magnetoresistance in few-layer CrPS4/Pt heterostructures

Abstract

Van der Waals (vdW) antiferromagnets hold great promise for next-generation highdensity and high-speed spintronic devices due to their unique magnetic and electronic properties. In this work, we systematically investigate the thickness-dependent spin Hall magnetoresistance in ultrathin CrPS4/Pt heterostructures. The transverse resistance exhibits a distinct spin-flop signature below the Néel temperature when the CrPS4 thickness exceeds eight layers, whereas this feature gradually vanishes in thinner samples. Remarkably, an anomalous Hall signal emerges above the Néel temperature and persists even in devices with CrPS4 as thin as three monolayers, remaining robust up to room temperature. Furthermore, angle-dependent longitudinal resistance measurements reveal that the magnitudes of both spin Hall magnetoresistance and anisotropic magnetoresistance are independent of the odd/even parity of the CrPS4 layer number. Such behavior suggests that the interfacial spin-orbital coupled scattering from the orbital hybridization between CrPS4 and Pt plays a critical role for magnetotransport phenomena. These findings provide important insights into the design and understanding of ultrathin van der Waals antiferromagnetic spintronic devices.

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Article information

Article type
Communication
Submitted
03 Feb 2026
Accepted
29 Mar 2026
First published
31 Mar 2026

Nanoscale, 2026, Accepted Manuscript

Thickness-dependent spin Hall magnetoresistance in few-layer CrPS4/Pt heterostructures

C. Xu, X. He, J. Wang, W. Chen, S. Ding, Y. Hou, J. Yang and R. Wu, Nanoscale, 2026, Accepted Manuscript , DOI: 10.1039/D6NR00460A

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