Janus-Enhanced Magnetic Modulation under Strain Engineering and Carrier Doping in Fe3GaTe2 Monolayer

Abstract

Two-dimensional (2D) intrinsic ferromagnets Fe3GaTe2 have attracted considerable interest owing to the high Curie temperature (TC) and strong perpendicular magnetic anisotropy. Intrinsic manipulations, like Janus functionalization, offer a powerful approach to tune the magnetic properties for enhanced performance and flexibility. Here, we systematically investigated the electronic and magnetic properties of monolayer Fe3GaTe2 and its Janus derivatives (Fe3GaXTe) under biaxial strain and electrostatic doping via the first-principles calculations. As demonstrated, Janus functionalization substantially modifies the atomic magnetic moments, magnetic anisotropy energy (MAE), Dzyaloshinskii–Moriya interaction (DMI), exchange coupling, and TC by altering the geometric configuration, charge redistribution, and electronic states. Exchange interactions of the metallic Fe3GaXTe systems in response to mechanical strain and carrier doping were explored. A remarkable enhancement of exchange coupling was achieved under compressive strain and electron doping, resulting in a pronounced increase in TC. These behaviors originate from strain-induced modulation of super-exchange pathways and electric-field-driven redistribution of electronic states. Meanwhile, the MAE exhibits a tunable sign and magnitude, indicating a controllable manipulation of the easy magnetization axis. All these results highlight the effectiveness of Janus engineering in optimizing and tailoring the magnetic functionality of 2D ferromagnets and portray a promising roadmap for the applications of spintronic devices.

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Article information

Article type
Paper
Submitted
27 Dec 2025
Accepted
26 Mar 2026
First published
27 Mar 2026

Nanoscale, 2026, Accepted Manuscript

Janus-Enhanced Magnetic Modulation under Strain Engineering and Carrier Doping in Fe3GaTe2 Monolayer

C. Zhang, J. Zhou, Z. Zhang, C. Zhang, X. Zheng, F. Xu, L. Kong, L. Xu, Z. Wu, Y. Wu and J. Kang, Nanoscale, 2026, Accepted Manuscript , DOI: 10.1039/D5NR05465F

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