Growth and transport properties of InAsSb nanoflags

Abstract

The present work reports, for the first time, the growth of high-quality free-standing InAsSb nanoflags and their electronic properties. Different growth conditions have been explored, and zinc blende InAsSb nanoflags of various composition have been obtained. In particular, InAs_0.77Sb_0.23 nanoflags are on average (2000 ± 180) nm long, (640 ± 50) nm wide, and (130 ± 30) nm thick. We show that these nanoflags have a Landé g-factor larger than InAs and InSb and a mobility comparable to those of the best performing InAs and InSb nanoflags. Besides, we show evidence for a surface Fermi level pinning in the conduction band of these InAs_0.77Sb_0.23 nanoflags, similar to the well-known behavior of InAs. This promises to make InAsSb easy to couple to superconductors, while keeping or improving many of the features that make InSb an interesting material for quantum applications.