Advancing 1.84 eV Wide-Bandgap Perovskite Solar Cells via Multidentate Molecular Engineering

Abstract

Wide-bandgap perovskite solar cells (PSCs) suffer from halide phase segregation, where bromine-rich domain tend to precipitation during crystallization. This results in uneven halide distribution and the gerenation of defects, acting as non-radiative recombination centers that limit both device efficiency and operational stability. Herein, we introduced a multidentate additive 2,4,6-Tris(4-carboxyphenyl)-1,3,5-triazine (H3TATB) — a planar, π-conjugated molecule with high C₃ symmetry and three terminal carboxyl (–COOH) groups anchored to a triazine core. The incorporation of H3TATB into the perovskite precursor slows perovskite crystallization kinetics and preferentially coordinates with Br-rich species, effectively regulating halide distribution. The resulting H3TATB-modified films exhibit homogeneous composition, enhanced crystallinity, and significantly reduced defect density. Moreover, these films show an average contact potential difference values of 0.23 V, notably lower than the 0.32 V of the control film, indicating a reduced work function and n-type doping characteristics that facilitate efficient electron extraction at the interface in p-i-n devices. Wide-bandgap PSCs (1.84 eV) incorporating H3TATB obtain a power conversion efficiency of 19.26%, retaining 88.06% of the initial efficiency after 800 h under ambient air conditions (30% RH). This work demonstrates that targeted molecular additives can effectively suppress Br-rich phase precipitation, mitigate halide segregation, and promote uniform perovskite film growth — providing a viable pathway toward high-performance, stable wide-bandgap perovskites for tandem solar cell applications.

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Article information

Article type
Paper
Submitted
28 Nov 2025
Accepted
16 Jan 2026
First published
16 Jan 2026

Nanoscale, 2026, Accepted Manuscript

Advancing 1.84 eV Wide-Bandgap Perovskite Solar Cells via Multidentate Molecular Engineering

P. Wang, T. Zhang, X. Sun, T. Wang, Q. Li, M. Cai, D. Duan, Y. Ma, J. Pan and H. Hu, Nanoscale, 2026, Accepted Manuscript , DOI: 10.1039/D5NR05029D

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