Laser Interference Lithography-Defined Electrochemical Etching of ordered InP Nanopore Arrays

Abstract

To face the challenge of disordered crysto oriented pore (COP) removal during organized porous InP growth, we demonstrate a strategy of laser interference lithography-defined electrochemical etching to obtain the intact porous structure of InP. The simulation showed that the electric field has a monotonic increasing trend with the decrease of both opening’s diameters (1 μm down to 0.4 μm at constant period 2 µm) and periods (from 5 μm to 0.2 μm with duty ratio 1:1) at a constant current density of 320 mA·cm-2. Experiment proved that the thickness of the COP will decrease at constant current density 320 mA·cm-2 due to the reduce of the diameters and periods of the opening and eventually disappear at the period about 0.4 μm (duty ratio 1:1). It indicates that the COP can be removed while the diameters and periods of the opening are close to some critical values, which provides a new way for fabricating the intact porous structures by laser interference lithography-defined electrochemical etching.