Ultrafast Self-Powered Semi-Transparent Pyro-Phototronic Device Array Based on Room-Temperature Amorphous In2S3/NiO Heterostructures

Abstract

We report a room-temperature–fabricated, self-powered, semi-transparent pyro-phototronic device array based on amorphous In2S3/NiO heterostructures. The amorphous In2S3 layer, confirmed by XRD, enables a transparent device with ~36% visible transmittance, suitable for wearable and transparent electronics. Leveraging the pyroelectric effect at the In2S3/NiO interface and a transparent AgNW/ZnO electrode, the device exhibits ultrafast (<20 μs) photoresponse and responsivity up to 0.2 A W-1 under 420 nm illumination without external bias. The AgNW/ZnO electrode enhances photocurrent stability and reproducibility. These results demonstrate a low-temperature, versatile heterostructure platform for next-generation transparent, self-powered optoelectronic and wearable photocommunication devices.