Van der Waals Stacked CdS /WSe2 Heterostructure For High-Performance Photodetection

Abstract

Transition metal dichalcogenides have garnered growing attention in optoelectronic applications owing to their unique physicochemical properties and efficient carrier transport capabilities. However, their atomic-scale thickness severely limits light absorption efficiency. Herein, we fabricated a van der Waals stacked heterostructure conveniently and efficiently via transferring a CdS nanobelt onto a bilayer WSe2 nanosheet. Benefiting from the formation of a type-II band alignment between WSe2 and CdS, the CdS/WSe2 photodetector achieves a high responsivity of 643.9/1315.5 A/W and an outstanding specific detectivity of 2.89 × 1013/5.91 × 1013 Jones under weak 450 /520 nm light irradiation, respectively. Moreover, the p-n junction formed between p-type WSe2 and n-type CdS effectively suppresses dark current, leading to a 1591.5× (194.5×) enhancement in the on/off ratio compared to the pure CdS (pure WSe2 ) control devices. This work demonstrates the great potential of vdW stacked heterostructures for high-performance photodetectors and provides new insights into the development of advanced optoelectronic devices.