Synthesis and Electrical Characterization of Rhenium-Doped WS2 Nanotubes

Abstract

Tungsten disulfide nanotubes (WS₂-NTs) have attracted significant interest as one-dimensional semiconducting materials for electronic and optoelectronic devices. The development of controlled doping techniques is essential for tuning their electronic properties and enhancing device performance. In this study, we performed rhenium substitution in WS₂-NTs with diameters of approximately 10 nm via the chemical vapor transport method. The concentration of substituted Re was estimated to be approximately 1.0 at.%. Structural incorporation of Re atoms into the WS₂-NT lattice effectively modified the electrical properties. As a result, the Re-doped WS₂-NTs exhibited electrical conductivity almost three orders of magnitude higher than that of pristine WS₂-NTs. These findings reveal a strong correlation between heteroatom-induced structural modification and electrical performance, demonstrating the potential of Re doping for tailoring WS₂-NTs towards advanced nanoelectronic applications.