Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials

Abstract

This study offers a thorough and systematic examination of the hot electron energy-loss rate (ELR) within GaSb/InAs, GaAs/AlAs, and GaN/AlN finite-square geometrical QWs owing to electron--longitudinal optical (LO)-phonon coupling via the Fr\"{o}hlich interaction under a quantizing magnetic field by using the electron-temperature-based formalism. Synchronously, the findings obtained in these GaSb/InAs, GaAs/AlAs, and GaN/AlN finite-depth-well confinement layers are compared to infinite-depth-well counterparts. The primary outcomes are derived as the following: The analytical formulation governing the ELR in GaSb/InAs, GaAs/AlAs, and GaN/AlN finite-depth QWs is derived by explicitly calculating for the optic-phonon interaction of hot-electrons. The results derived from the numerical study clarify how the hot-electron ELR responds to variation not only in the Landau-quantizing field, the well-layer thickness, and the effective-carrier temperature but also the surface-carrier density. Our evidence findings establish that among the GaSb/InAs, GaAs/AlAs, and GaN/AlN finite-depth QW materials considered, the GaN/AlN-based QW delivers the strongest hot-electron ELR response, the GaAs/AlAs-based counterpart follows with a reduced magnitude, while the GaSb/InAs-based QW yields the weakest dissipation. Concurrently, the derived results confirm that a finite-square confining potential markedly suppresses the hot-electron ELR in GaSb/InAs, GaAs/AlAs, and GaN/AlN QWs when compared with their infinite-depth counterparts. The ELR within QW heterostructures is appreciably impacted by confinement potentials. This highlights the important role of quantum confinement engineering in controlling 2D electronic energy relaxation. Therefore, adjusting the confinement potential shape or the quantum well depth can effectively enhance hot-electron dynamics and overall device efficiency within QW-based optoelectronic applications, without changing the materials. This work opens up promising avenues for advancing optoelectronic devices employing finite-square confining potential QWs.