Phosphorus-Doped Carbon Quantum Dots for Broadband Self-Powered n-Si Schottky Photodetectors with Enhanced Quantum Efficiency and Detectivity

Abstract

The interfacial energetics of metal-semiconductor junctions critically determine the carrier transport behavior and overall performance of Schottky-based optoelectronic devices. In this work, unmodified carbon quantum dots (CQDs) and phosphorus-doped carbon quantum dots (P-CQDs) were synthesized and comprehensively characterized through transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, and scanning electron microscopy coupled with energy-dispersive X-ray spectroscopy (SEM-EDS). The engineered quantum dots were subsequently integrated into n-Si heterojunction architectures to investigate the influence of heteroatom-induced band structure modulation on broadband self-powered photodetection. Under zero-bias operation, the P-CQD/n-Si photodetector demonstrated markedly enhanced optoelectronic performance compared to the undoped CQD/n-Si device. The photocurrent increased from 2.22×10 -5 A (CQD/n-Si) to 9.66×10 -5 A (P-CQD/n-Si) under 100 mW cm -2 illumination. The maximum responsivity reached 0.386 A/W, while specific detectivity achieved 6.99×10 10 Jones, accompanied by a low noise-equivalent power of 1.46×10 -12 W Hz -1/2 . Broadband spectral sensitivity spanning 351-1600 nm was achieved, with pronounced enhancement in the visible-NIR region. Notably, the external quantum efficiency (EQE) was significantly enhanced from ~3.34% in the undoped device to ~22.88% after phosphorus doping, corresponding to an approximately sevenfold improvement in photon-to-charge conversion efficiency. Overall, phosphorus doping provides an effective strategy for tailoring interfacial barrier properties and quantum dot electronic structure, enabling high-responsivity, low-noise, and high-efficiency self-powered photodetectors suitable for next-generation wide-band optoelectronic applications.