Suppression of the metal-to-semiconductor transition in nanocrystalline Ti4O7via crystallite size control

Abstract

Nanocrystalline Ti4O7 with controlled crystallite sizes was synthesized to investigate the effect of crystallite size on the metal–semiconductor transition. Magnetic susceptibility measurements revealed that the transition fraction for Ti4O7 with an average crystallite size of 11 nm was approximately 60% of that observed for Ti4O7 with a crystallite size of 30 nm, indicating suppression of the phase transition. Differential scanning calorimetry (DSC) showed that the observed transition enthalpies were 302 J mol−1 and 850 J mol−1 for the smaller and larger crystallite sizes, respectively, showing a reduction in the transition enthalpy with decreasing crystallite size. Thermodynamic calculations suggest that this suppression arises from surface energy contributions, which reduce the transition enthalpy with decreasing crystallite size. These results indicate that reducing the crystallite size offers an effective means of controlling the metal–semiconductor transition in Ti4O7, contributing to the development of tunable phase-transition materials for advanced functional materials.

Graphical abstract: Suppression of the metal-to-semiconductor transition in nanocrystalline Ti4O7 via crystallite size control

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Article information

Article type
Paper
Submitted
13 Dec 2025
Accepted
21 Jan 2026
First published
23 Feb 2026
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2026, Advance Article

Suppression of the metal-to-semiconductor transition in nanocrystalline Ti4O7 via crystallite size control

T. Kubota, R. Seiki, T. Kondo, V. C. Agulto, M. Nakajima, S. Ohkoshi and H. Tokoro, Mater. Adv., 2026, Advance Article , DOI: 10.1039/D5MA01459J

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