Probing Surfaces and Interfaces of Halide Perovskites: from Atomic Mapping to Optoelectronic Properties

Abstract

Halide perovskites have exhibited outstanding optoelectronic properties and been widely applied in the field of solar cells, detectors, and light emitting diodes. Surface and interface are crucial for the performance of the perovskite-based devices, as they could significantly influence carrier transport, recombination and so forth. This review covers the state-of-the-art techniques for characterizing surface and interface of halide perovskites, focusing on scanning probe microscopy (SPM) and complementary techniques for high-resolution characterization. It explores conventional SPM methods, such as scanning tunneling microscopy (STM), atomic force microscopy (AFM), Kelvin probe force microscopy (KPFM) and their applications in topography and optoelectronic properties. The discussion extends to integrated SPM-based optoelectronic detection technologies like scanning near-field optical microscopy (SNOM), photoluminescence-AFM (PL-AFM), AFM-infrared spectroscopy (AFM-IR), and surface photovoltage microscopy (SPVM). Additionally, the review encompasses time-resolved methodologies, including time-resolved KPFM (tr-KPFM) and pump-probe KPFM (pp-KPFM), which are highlighted for their role in capturing ultrafast dynamic processes. Collectively, these tools provide a complete structural and optoelectronic analysis, significantly enhancing our understanding of the surfaces and interfaces of perovskites and driving advancements in material science and technology.

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Article information

Article type
Review Article
Submitted
15 Feb 2026
Accepted
24 Mar 2026
First published
26 Mar 2026
This article is Open Access
Creative Commons BY-NC license

EES Sol., 2026, Accepted Manuscript

Probing Surfaces and Interfaces of Halide Perovskites: from Atomic Mapping to Optoelectronic Properties

Z. Qu, J. Chen, B. Xue and S. Xiao, EES Sol., 2026, Accepted Manuscript , DOI: 10.1039/D6EL00030D

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