From precursor to performance: the impact of FAI impurities on halide perovskite thin films and devices

Abstract

While metal halide perovskites have yielded remarkable power conversion efficiencies in photovoltaic applications, uncertainty concerning their long-term stability remains a significant barrier to widespread deployment. Previous studies have demonstrated that trace impurities present in perovskite precursor materials can influence the crystallisation dynamics of perovskite thin-films and hence, affect crystal structure, film morphology and optoelectronic properties. However, the nature of the impurities in formamidinium iodide (FAI) and their effect(s) on film quality and device performance remain underexplored. In this work, we carry out a detailed analysis of the impurities present in commonly used commercial FAI sources, and probe their impact on the composition, structure, and optoelectronic quality of the resulting perovskite thin-films and devices. We find that while some FAI impurities can improve the optoelectronic properties of solution-processed perovskite thin-films, in vapour-processed films, their presence alters the sublimation behaviour of FAI, favouring irreversible degradation pathways which lead to the formation of sym-triazine. While sym-triazine does not directly incorporate into the perovskite films, the impurity-driven variation in sublimation behaviour results in films which can deviate from the target stoichiometry, even under otherwise optimised conditions; and thus, do not fully convert into the desired photoactive phase, eventually causing poor material stability. Our results highlight the importance of understanding and controlling impurity concentrations in perovskite precursor materials as a route to enhancing both performance and process reproducibility in perovskite solar cells.