Micro–nano surface engineering and property modulation: insights from black silicon for advanced material applications

Abstract

The advancement of micro–nano fabrication techniques has enabled the precise modification of material surfaces, allowing for unique physical and chemical properties to emerge, catering to diverse application requirements. Black silicon, a well-studied material compatible with CMOS technology, provides an excellent model for exploring the overall properties of micro–nano surface morphologies. This review systematically investigates the morphology fabricated by five mainstream synthesis methods for black silicon, offering an in-depth analysis of the underlying mechanisms and the impact of key parameters on surface morphology. In addition to structural features, this review discusses the formation of surface chemical bonds and their roles in modulating surface energy, wettability, and electronic passivation. Through this exploration, we examine how specific morphologies yield distinct physical and chemical properties that drive a wide range of applications, from photodetection to sensing and biomedical technologies. Key challenges of black silicon are discussed, including cost, mass production, and defect control, etc. This review aims to serve as a roadmap for researchers, guiding further advancements not only in black silicon but also in the broader field of nanomaterials, paving the way for breakthroughs across various domains of modern nanotechnology.

Graphical abstract: Micro–nano surface engineering and property modulation: insights from black silicon for advanced material applications

Article information

Article type
Review Article
Submitted
05 Dec 2025
First published
19 Mar 2026

Chem. Soc. Rev., 2026, Advance Article

Micro–nano surface engineering and property modulation: insights from black silicon for advanced material applications

J. Lv, L. Jiang, X. Liu, G. Li, M. Qian, M. Tang, X. Cheng, L. Lu, X. Ren, X. Zhang, H. Zou and Z. L. Wang, Chem. Soc. Rev., 2026, Advance Article , DOI: 10.1039/D5CS01448D

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