From solar cells to memristors: halide perovskites as a platform for neuromorphic electronics

Abstract

Halide perovskites are widely recognized for optoelectronic devices such as photodetectors, photovoltaics, and light emitting diodes. Crucially, their unique characteristic as a mixed ionic-electronic semiconductor has recently positioned them as a highly promising material for neuromorphic computing, which necessitates a dedicated review of this rapidly emerging field. This comprehensive review first correlates the relationship between the perovskite's crystal structure and its resulting optoelectronic and ionic properties, which underpins memristor functionality. We then systematically discuss the figure of merit, operating mechanisms, and characterization techniques for halide perovskite memristors. After critically reviewing the state-of-the-art devices, we analyze the critical gap between lab-scale systems and real-world applications, specifically tackling the challenges of crossbar array implementation and discussing various neuromorphic applications. Finally, we detail an outlook, highlighting persistent hurdles like endurance and stability as well as identifying key research directions, such as high-throughput experimentation and customizing devices based on the necessary trade-off between response time, energy, and retention to realize practical, next-generation neuromorphic hardware.