Shape Resonances in Silane and Fluorinated silanes.

Abstract

Low-energy electrons with silane and fluorinated silanes are central to plasma-enhanced deposition and etching processes. The shape resonances in these compounds are investigated using the Complex Absorbing Potential method. The key aspect is to locate the resonant state within a sea of continuum states, and this is achieved by applying the Nuclear Charge Stabilisation method in conjunction with the Parametric Equations of Motion. The SiH₄ resonance energy is in reasonable agreement with the electron transmission spectroscopy, while the SiF₄ resonance explains the low-energy peak in the total scattering cross sections. Successive fluorination produces an increasing trend in both resonance position and width.