Comparison of optical and transport characteristics due to symmetrical and asymmetrical interface-optical-phonon modes of asymmetrical Gaussian GaAs/AlAs quantum wells for both AlAs-barrier and GaAs-well layers

Abstract

Optical and transport characteristics of an asymmetrical Gaussian GaAs/AlAs QW that is induced by the electron interaction with symmetrical and asymmetrical interface-optical-phonons (IOPs) in AlAs (layered-barrier) as well as GaAs (layered-well) are thoroughly researched and comparatively analyzed with the adoption of the projection operator (PO) technique, the Wolfram Mathematica software, and the profile technique for the corresponding analytical and numerical calculations. The following are the main findings achieved in this work: The detailed formula of the absorption power of the asymmetrical Gaussian GaAs/AlAs QW and its corresponding comprehensive absorption spectra have been derived. In these comprehensive magneto-optical absorption spectra, the characteristics of the optically detected magneto-IOP resonance (MIOPR) peaks in the cases of the symmetrical and asymmetrical IOP mode emission and absorption within AlAs (layered-barrier) as well as GaAs (layered-well), including the position, strength, and FWHM in the asymmetrical Gaussian GaAs/AlAs QW, are focused on to meticulously evaluate and completely compare under the external and structural parameter influences. In addition, the various contribution levels of the symmetrical and asymmetrical IOP modes within AlAs (layered-barrier) as well as GaAs (layered-well) in the emission and absorption cases to the e--p scattering's mechanism in the asymmetrical Gaussian GaAs/AlAs QW are also analyzed and compared. Moreover, the difference in the electric field influence on the symmetrical IOP mode within GaAs-well layers compared with other parameter influences is also provided. Our comprehensive and detailed findings are defined in the Conclusion. This work shows promising perspectives that could facilitate progress in optoelectronic devices based on the asymmetrical-Gaussian potential QW.