Tunable negative photoconductance states in a C60 device with optically induced trap center reconfiguration

Abstract

Negative photoconductance memory (NPM) shows great potential for use in neuromorphic in-sensor computing for visual information processing, but its tunability remains a challenge. Here, we propose a C₆₀ optoelectronic device that can provide tunable NPM behavior, enabling the developed device to faithfully mimic synapse plasticity, including short-and long-term memories. The NPM effect can be flexibly controlled by multiple light-stimulus parameters to construct memory states. Light-driven reconfiguration of the trap centers is responsible for the NPM effect, and the deexcitation of photogenerated holes and electrons is responsible for the memory fading effect. This work lays a significant foundation relating to hardware and NPM tunability for neuromorphic in-sensor computing.