Thermal field simulation and optimization of 12-inch SiC crystals grown in a novel resistance heating furnace

Abstract

Silicon carbide (SiC) has been widely adopted in power electronics and radio frequency devices owing to its excellent physical properties. However, its high production cost remains a limiting factor for larger-scale industrial applications, particularly in emerging fields such as silicon-based device interposers and AR optical glasses. The development of 12-inch SiC crystals therefore plays a critical role for reducing production costs and enabling broader industrial adoption of SiC. In this study, the thermal-field characteristics of 12-inch SiC crystal growth in a novel resistance-heating furnace were systematically investigated through combined numerical simulation and experimental verification. By analyzing the effects of heating power, external insulation, and top insulation on the thermal-field distribution in both the growth area and the raw material area, it is determined that the heating power is 45 kW, and the optimal configuration is no external insulation and top insulation.This configuration resulted in a low radial temperature gradient of 0.19 °C/cm in the growth area. Simultaneously, the high-temperature zone in the raw material area shifted upward, the temperature difference between the upper and lower powder layers was reduced to 3.12 °C, and suitable radial (0.36 °C/cm) and axial (1.02 °C/cm) temperature gradients were established. Furthermore, polycrystalline SiC ingots with a diameter of 300 mm and a thickness of approximately 20 mm were successfully grown in the novel resistance-heating furnace, confirming the favorable performance of the optimized thermal field. These results not only validate the simulation model but also provide a practical reference for the growth of thicker, low-defect 12-inch SiC crystals.