PbS Quantum Dot Film as Hole Transport Layer for Self-Powered AgBiS 2 Nanocrystal Photodetectors

Abstract

We fabricated an all-inorganic self-powered photodetector based on ZnO/AgBiS2/PbS-EDT. Compared with the reference device employing Spiro-OMeTAD as the hole transport layer (HTL), the PbS-EDT HTL has higher stability, electrical conductivity and favourable near-infrared light absorption. Consequently, the asfabricated photodetector exhibits superior photovoltaic performance, stability and photoresponsivity over the reference device.

Supplementary files

Article information

Article type
Communication
Submitted
18 Apr 2026
Accepted
29 May 2026
First published
11 Jun 2026

Chem. Commun., 2026, Accepted Manuscript

PbS Quantum Dot Film as Hole Transport Layer for Self-Powered AgBiS 2 Nanocrystal Photodetectors

J. Zhang, Z. Zhang, C. Ling, J. Zhou, Y. Lv, M. Yang, H. Wu and Q. Zhang, Chem. Commun., 2026, Accepted Manuscript , DOI: 10.1039/D6CC02387H

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