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Crystal engineering of magnetron sputtered manganese nitride thin film electrodes is demonstrated. Mn3N2 electrodes deliver a high areal capacitance of 66.7 mF cm⁻², attributed to favorable K+ adsorption, enhanced charge transfer and lower migration barrier. An asymmetric Mn3N2//VN supercapacitor achieves an energy density of 153.1 mWh cm⁻3 and excellent cycling stability.
Q. Guo, S. Fang, B. Wei, Q. Chen, J. Chen, J. Huang, J. Wu, M. Jiang, X. Ge, N. Liao, H. Liang and Z. Qi, Chem. Commun., 2026, Accepted Manuscript , DOI: 10.1039/D6CC02349E
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