Construction of p-Bi2O3/n-ZnO nanowire heterojunctions with enhanced photoelectrochemical properties

Ying-Chu Chen; Meng-Lei Lu; Yu-Kuei Hsu

doi:10.1039/D6CC01349J

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Construction of p-Bi₂O₃/n-ZnO nanowire heterojunctions with enhanced photoelectrochemical properties

Ying-Chu Chen,^a Meng-Lei Lu^b and Yu-Kuei Hsu

*^b

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* Corresponding authors

^a Department of Chemical Engineering & Biotechnology, National Taipei University of Technology, Taipei City, Taiwan

^b Department of Opto-Electronic Engineering, National Dong Hwa University, No. 1, Sec. 2, Da Hsueh Road, Shoufeng, Hualien, Taiwan
E-mail: ykhsu@gms.ndhu.edu.tw

Abstract

Bi₂O₃/ZnO nanowire heterostructures were fabricated via hydrothermal synthesis. The optimized electrode (400 °C annealing) achieved a photocurrent density of 0.6 mA cm⁻², three times higher than that of pristine ZnO, due to enhanced charge separation from the p–n junction formation.

This article is part of the themed collection: ChemComm Electrocatalysis

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DOI: https://doi.org/10.1039/D6CC01349J
Article type: Communication
Submitted: 05 Mar 2026
Accepted: 09 Apr 2026
First published: 20 Apr 2026

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Chem. Commun., 2026, Advance Article

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Construction of p-Bi₂O₃/n-ZnO nanowire heterojunctions with enhanced photoelectrochemical properties

Y. Chen, M. Lu and Y. Hsu, Chem. Commun., 2026, Advance Article , DOI: 10.1039/D6CC01349J

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Construction of p-Bi₂O₃/n-ZnO nanowire heterojunctions with enhanced photoelectrochemical properties

Abstract

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Construction of p-Bi₂O₃/n-ZnO nanowire heterojunctions with enhanced photoelectrochemical properties

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