Atomic Layer Deposition of Metal Halide Perovskites: Chemistry, Growth Mechanisms, and Emerging Prospects

Abstract

Atomic layer deposition (ALD) offers exceptional control over film thickness, composition, and interface quality, making it an attractive approach for constructing metal-halide perovskite absorber layers. While ALD is now well established for transport layers and interfacial passivation, its direct use in synthesizing perovskite precursor layers such as lead iodide (PbI2) remains comparatively early-stage. This short review examines recent developments in ALD halide perovskite growth, post-deposition conversion strategies, and the emerging prospects of fully vapor-phase perovskite growth. We discuss limitations in precursor design, iodination chemistry, temperature compatibility, and device integration, while identifying short-term opportunities where ALD uniquely enables advances in perovskite photovoltaics, displays, and transistors. Finally, we offer a forward-looking assessment of the breakthroughs required for ALD to evolve from a niche method into a scalable deposition pathway for commercialization.