Correction: The leakage current suppression mechanism in a RuO2/SrTiO3/Ru capacitor induced by introduction of an ultra-thin GeO2 interfacial layer at the bottom interface

Heewon Paik; Dohyun Kim; Junil Lim; Haengha Seo; Tae Kyun Kim; Jong Hoon Shin; Haewon Song; Hansub Yoon; Dae Seon Kwon; Dong Gun Kim; Jung-Hae Choi; Cheol Seong Hwang

doi:10.1039/D5TC90182K

Correction: The leakage current suppression mechanism in a RuO₂/SrTiO₃/Ru capacitor induced by introduction of an ultra-thin GeO₂ interfacial layer at the bottom interface

Heewon Paik,^a Dohyun Kim,^ab Junil Lim,^a Haengha Seo,^a Tae Kyun Kim,^a Jong Hoon Shin,^a Haewon Song,^a Hansub Yoon,^a Dae Seon Kwon,^c Dong Gun Kim,^a Jung-Hae Choi^b and Cheol Seong Hwang*^a

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* Corresponding authors

^a Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
E-mail: cheolsh@snu.ac.kr

^b Electronic and Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea

^c Department of Chemical and Biological Engineering, Sookmyung Women's University, Seoul, Republic of Korea

Abstract

Correction for ‘The leakage current suppression mechanism in a RuO₂/SrTiO₃/Ru capacitor induced by introduction of an ultra-thin GeO₂ interfacial layer at the bottom interface’ by Heewon Paik et al., J. Mater. Chem. C, 2025, https://doi.org/10.1039/d5tc02736e.

Journal of Materials Chemistry C

Correction: The leakage current suppression mechanism in a RuO₂/SrTiO₃/Ru capacitor induced by introduction of an ultra-thin GeO₂ interfacial layer at the bottom interface

Abstract

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Correction: The leakage current suppression mechanism in a RuO₂/SrTiO₃/Ru capacitor induced by introduction of an ultra-thin GeO₂ interfacial layer at the bottom interface

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