Correction: An ion-gating synaptic memristor based on tri-layer HfOx composition regulation
Abstract
Correction for ‘An ion-gating synaptic memristor based on tri-layer HfOx composition regulation’ by Lanqing Zou et al., J. Mater. Chem. C, 2025, 13, 5326–5331, https://doi.org/10.1039/D4TC04564E.