Issue 16, 2025

Correction: An ion-gating synaptic memristor based on tri-layer HfOx composition regulation

Abstract

Correction for ‘An ion-gating synaptic memristor based on tri-layer HfOx composition regulation’ by Lanqing Zou et al., J. Mater. Chem. C, 2025, 13, 5326–5331, https://doi.org/10.1039/D4TC04564E.

Associated articles

Article information

Article type
Correction
Submitted
24 Mar 2025
Accepted
24 Mar 2025
First published
07 Apr 2025
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2025,13, 8336-8336

Correction: An ion-gating synaptic memristor based on tri-layer HfOx composition regulation

L. Zou, J. Zhang, Y. Yi, J. Ren, H. Sun, C. Zhu, J. Xu, S. Hu, L. Ye, W. Cheng, Q. He and X. Miao, J. Mater. Chem. C, 2025, 13, 8336 DOI: 10.1039/D5TC90053K

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements