Correction: An ion-gating synaptic memristor based on tri-layer HfOx composition regulation

Lanqing Zou; Junming Zhang; Yunhui Yi; Jiawang Ren; Huajun Sun; Chuqian Zhu; Jiyang Xu; Sheng Hu; Lei Ye; Weiming Cheng; Qiang He; Xiangshui Miao

doi:10.1039/D5TC90053K

Correction: An ion-gating synaptic memristor based on tri-layer HfO_x composition regulation

Lanqing Zou,^a Junming Zhang,^a Yunhui Yi,^a Jiawang Ren,^a Huajun Sun,*^ab Chuqian Zhu,^a Jiyang Xu,^a Sheng Hu,^ac Lei Ye,^ab Weiming Cheng,^ab Qiang He^ab and Xiangshui Miao^ab

Author affiliations

* Corresponding authors

^a School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Hubei Engineering Research Center on Microelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
E-mail: shj@hust.edu.cn

^b Hubei Yangtze Memory Laboratories, Wuhan 430205, China

^c Wuhan Xinxin Semiconductor Manufacturing Corporation, Wuhan, China

Abstract

Correction for ‘An ion-gating synaptic memristor based on tri-layer HfO_x composition regulation’ by Lanqing Zou et al., J. Mater. Chem. C, 2025, 13, 5326–5331, https://doi.org/10.1039/D4TC04564E.

Journal of Materials Chemistry C

Correction: An ion-gating synaptic memristor based on tri-layer HfO_x composition regulation

Abstract

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Correction: An ion-gating synaptic memristor based on tri-layer HfO_x composition regulation

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