Construction of ferroelectric topological domains in freestanding epitaxial BiFeO3 nanostructures

Abstract

Topological center domains in ferroelectric nanostructures have garnered considerable attention owing to their novel functionalities and potential applications in next-generation electronic devices. In this study, we demonstrate the stabilization of room-temperature topological center domains in freestanding epitaxial BiFeO3 nanoislands grown on SrRuO3 bottom layer. Notably, we demonstrate electrically reversible control of highly conductive channels localized at center domain core regions through applied electric fields, establishing critical functionality for non-volatile memory applications. The realization of these switchable conductive states in transferable architectures further establishes a materials platform for integrating functional topological domains with flexible electronics.