Experimental demonstration of in-memory computing using pressure stimulated SnO2−x-based memristive device as inverter and active-low 2 : 1 multiplexer

Abstract

This article reports a tin oxide (SnO2−x) based memristor. In the Ag/SnO2−x/ITO structured two-terminal memristive device, the silver (Ag) serves as the top electrode (TE), while indium tin oxide (ITO) is used as the bottom electrode (BE), whereas SnO2−x acts as the resistive switching layer. The device demonstrates non-volatile resistive switching (RS) characteristics, with resistance windows of the order of 105 Ω and 104 Ω for electrical and pressure conditions, respectively, maintained up to 11 × 103 switching cycles. The fabricated device's experimentally verified pressure-dependent resistive switching property makes it a potential candidate for human-inspired next-generation artificial intelligence (AI) systems with high power efficiency (0.38 mW in this study). This study reports an integrated digital memory and analog sensor by the fabricated Ag/SnO2−x/ITO memristor in its operation, where utilizing external mechanical pressure and applied voltage as inputs, the output current change makes the device perform as a chip-enabler logic inverter and an active-low 2 : 1 multiplexer. This makes the device a “memlogic device” which can be utilised in “in-memory computing” applications, simplifying the next-generation reconfigurable piezoelectric circuits for future AI technology.

Graphical abstract: Experimental demonstration of in-memory computing using pressure stimulated SnO2−x-based memristive device as inverter and active-low 2 : 1 multiplexer

Supplementary files

Article information

Article type
Paper
Submitted
26 Apr 2025
Accepted
22 Jun 2025
First published
26 Jun 2025
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2025, Advance Article

Experimental demonstration of in-memory computing using pressure stimulated SnO2−x-based memristive device as inverter and active-low 2 : 1 multiplexer

B. K. Keshari, S. Saha, S. DebRoy, A. Salimath, V. Mattela, S. Pal, S. Shankar Dan and P. Sahatiya, J. Mater. Chem. C, 2025, Advance Article , DOI: 10.1039/D5TC01687H

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