Experimental demonstration of in-memory computing using pressure stimulated SnO2−x-based memristive device as inverter and active-low 2 : 1 multiplexer

Abstract

This article reports a tin oxide (SnO_2−x) based memristor. In the Ag/SnO_2−x/ITO structured two-terminal memristive device, the silver (Ag) serves as the top electrode (TE), while indium tin oxide (ITO) is used as the bottom electrode (BE), whereas SnO_2−x acts as the resistive switching layer. The device demonstrates non-volatile resistive switching (RS) characteristics, with resistance windows of the order of 10⁵ Ω and 10⁴ Ω for electrical and pressure conditions, respectively, maintained up to 11 × 10³ switching cycles. The fabricated device's experimentally verified pressure-dependent resistive switching property makes it a potential candidate for human-inspired next-generation artificial intelligence (AI) systems with high power efficiency (0.38 mW in this study). This study reports an integrated digital memory and analog sensor by the fabricated Ag/SnO_2−x/ITO memristor in its operation, where utilizing external mechanical pressure and applied voltage as inputs, the output current change makes the device perform as a chip-enabler logic inverter and an active-low 2 : 1 multiplexer. This makes the device a “memlogic device” which can be utilised in “in-memory computing” applications, simplifying the next-generation reconfigurable piezoelectric circuits for future AI technology.