Improved performance and bias stability in TFTs with solution-processed graphene oxide-doped In2O3 active layers treated under deep UV irradiation

Abstract

Recently, amorphous metal oxide semiconductors have become an appealing research target to replace silicon-based devices, especially in display backplanes, because of their high charge carrier mobility, solution processability, and transparency. One advantage of solution processing is the ability to mix components easily, which provides the opportunity to form layers with a wide variety of dopants at arbitrary concentrations. Graphene oxide (GO) and other graphene derivatives have been used to enhance certain properties of metal oxide semiconductors or to achieve novel characteristics, such as photoresponsivity or neuromorphic behavior. In this study, we fabricated thin film transistors with solution-processed In₂O₃/GO as the active layer and studied the effects of deep ultra-violet (UV) pre-annealing under ambient conditions. High-energy UV radiation generates ozone and assists in the decomposition of the precursor salt. It is reported that a 20 s pre-treatment is sufficient to improve device performance characteristics, and an improvement in gate bias stress is also observed. A deep UV-treated In₂O₃/GO active layer was employed in a model digital logic circuit to demonstrate its applicability.