Vertical p–i–p perovskite photoconductors combining intrinsic and doped organic transport layers

Abstract

Photoconductors are a class of photodetectors that can exhibit photoconductive gain, a key advantage for achieving high sensitivity. While most reported devices rely on lateral architectures, here we present fully vacuum-deposited vertical p–i–p perovskite photoconductors based on methylammonium lead iodide (MAPI). The influence of hole transport layers (HTLs), both intrinsic and doped, was systematically investigated. Devices incorporating intrinsic HTLs show significantly reduced dark currents, particularly when the intrinsic layer is sufficiently thick. When intrinsic and doped HTLs are combined, the devices benefit from both suppressed dark current and enhanced charge extraction, leading to superior performance. Optimized structures achieve quantum efficiency >3000% and high on/off ratio, demonstrating the potential of this vertical architecture for highly sensitive optoelectronic applications.