Issue 17, 2025

Enhanced dielectric properties of alternative NO-gas-based SiO2 films via plasma-enhanced chemical vapor deposition for high-performance indium–gallium–zinc oxide thin-film transistors

Abstract

Nitric oxide (NO) is proposed as an alternative gas to nitrous oxide (N2O) for the formation of silicon dioxide (SiO2) films by plasma-enhanced chemical vapor deposition. Post-thermal annealing in a N2 atmosphere is employed to improve the current–voltage and capacitance–voltage characteristics of the films by removing charge impurities and curing defect states, thereby restoring the intrinsic dielectric properties of the NO-based SiO2 films. The effects of the enhanced dielectric properties of the NO-based SiO2 films on the device performance of indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) were subsequently investigated. The IGZO TFT consisting of a NO-based SiO2 dielectric film annealed at 300 °C in a N2 atmosphere exhibits excellent electrical characteristics, including a low off-current, large on/off ratio, low subthreshold swing, high field-effect mobility, and threshold voltage near 0 V. Improvements in electrical stability of the IGZO TFTs against a prolonged bias stress are also achieved owing to the introduction of N2-annealed SiO2 dielectric films. Finally, charge-transport properties are investigated via temperature-dependent field-effect mobility analysis to determine the activation energy and interfacial trap density of states, which agree well with the improved device performance of the IGZO TFTs consisting of NO-based SiO2 films with enhanced dielectric properties.

Graphical abstract: Enhanced dielectric properties of alternative NO-gas-based SiO2 films via plasma-enhanced chemical vapor deposition for high-performance indium–gallium–zinc oxide thin-film transistors

Supplementary files

Article information

Article type
Paper
Submitted
17 Jan 2025
Accepted
19 Mar 2025
First published
19 Mar 2025

J. Mater. Chem. C, 2025,13, 8461-8469

Enhanced dielectric properties of alternative NO-gas-based SiO2 films via plasma-enhanced chemical vapor deposition for high-performance indium–gallium–zinc oxide thin-film transistors

S. Park, E. Kim, Y. Jang, Y. Kang, Y. Kim, J. Yi and T. Ha, J. Mater. Chem. C, 2025, 13, 8461 DOI: 10.1039/D5TC00213C

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