Reconfigurable logic operations in a MoS2-based resistive switching device for neuromorphic computing applications

Abstract

Neuromorphic computing, inspired by the remarkable capabilities of the human brain, has emerged as a promising paradigm for achieving high-performance and energy-efficient computing systems. Two-dimensional transition metal dichalcogenides (TMDs) have become an exciting option in this scenario because 2D material layers provide an intriguing window for the movement of ions along the atomically thin layers. Molybdenum disulfide (MoS₂) has attracted significant attention for future neuromorphic computing devices due to its unique qualities, which include its effective atomically thin structure and tailored electrical characteristics. This study presents a novel MoS₂ thin film-based multifunctional resistive switching device with switching thresholds approaching 400 mV, designed explicitly for neuromorphic computing applications. The significantly thin nature of the MoS₂ layer ensures efficient charge transport and enhances the switching performance of the device. Resistive switching devices are vertically fabricated using a scalable and cost-effective process that involves depositing a few atomic layers of MoS₂. It is possible to achieve extreme performance with an atomic-scale inter-electrode distance using a vertical device, particularly in lowering the upper limit switching voltages. The resulting device exhibits excellent electrical characteristics, including low power consumption, high switching speed, and low switching voltages (400 mV). The low switching voltages offer the potential for low-power neuromorphic computing and direct interfacing with human neural networks because the voltage range is equivalent to biological action potentials.