Issue 12, 2025

Enhanced P-type conductivity in Sb2Se3 through alkali and alkaline earth metal doping

Abstract

Antimony selenide (Sb2Se3) has recently received much attention as a potential candidate for light absorbers in thin-film photovoltaic technologies because of its earth abundance, nontoxicity, and promising electrical and optical properties. Treatments with alkali and alkaline earth elements have been shown to enhance the performance of conventional thin-film solar cells. In this study, we employ hybrid density functional theory to investigate the electronic structures and defect properties of Sb2Se3 doped with alkali and alkaline earth elements in comparison to those of native undoped Sb2Se3. Our results indicate that undoped Sb2Se3 exhibits slight p-type conductivity and semi-insulating property under Se-rich and Se-poor conditions, respectively, consistent with experimental observations. The calculations further reveal that potassium, magnesium, and calcium act as acceptor dopants in a Se-rich environment, improving the p-type conductivity by preferentially forming antisite defects, whereas sodium has a negligible impact. Notably, calcium substitution at Sb site shows the lowest formation energy and a shallow transition energy level, significantly enhancing p-type conductivity. Given its earth abundance, eco-friendliness, and nontoxicity, thus, calcium presents a promising p-type dopant for improving the conductivity and efficiency of Sb2Se3-based devices.

Graphical abstract: Enhanced P-type conductivity in Sb2Se3 through alkali and alkaline earth metal doping

Supplementary files

Article information

Article type
Paper
Submitted
18 Dec 2024
Accepted
16 Feb 2025
First published
17 Feb 2025
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. A, 2025,13, 8507-8517

Enhanced P-type conductivity in Sb2Se3 through alkali and alkaline earth metal doping

E. Cho, S. Sung, K. Yang, J. Lee, V. Hoang, B. Kadiri-English, D. Hwang, J. Kang and D. Kim, J. Mater. Chem. A, 2025, 13, 8507 DOI: 10.1039/D4TA08978B

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