Issue 6, 2025

Simultaneously boosting electrical and thermal transport properties of CuGaTe2 through XCl2 (X = Cd, Zn) doping-driven band and defect engineering

Abstract

The high resistivity and lattice thermal conductivity of CuGaTe2 have hindered its development. In this work, the thermoelectric and mechanical performances of CuGaTe2 thermoelectric materials were synergistically optimized by introducing CdCl2 and ZnCl2 to regulate the microstructure. Guided by first-principles calculations in composition design, it was found that the introduction of Cd and Zn increases the electronic density of states near the Fermi level, while significantly reducing the sound velocity. By forming CdGa and ZnGa acceptor defects, the resistivity was significantly decreased. Additionally, detailed micro/nano-structure characterization indicated that doping generated various scale defects, including high-density dislocations, stacking faults, and nanopores. These nanopores contribute to an energy filtering effect, which effectively counteracts the reduction in the Seebeck coefficient caused by acceptor doping. Moreover, these defects significantly scatter phonons of various wavelengths, leading to a decrease in lattice thermal conductivity. Ultimately, the (CuGaTe2)0.985(ZnCl2)0.015 sample reached a ZT of 1.35 at 823 K. More importantly, the (CuGaTe2)0.985(ZnCl2)0.015 sample also exhibited good mechanical properties due to the obstruction of dislocation movement by the multi-scale defects. This work illustrates a method to optimize the performance of thermoelectric materials by rationally introducing metal chlorides, presenting new perspectives for the development of high-performance thermoelectric materials.

Graphical abstract: Simultaneously boosting electrical and thermal transport properties of CuGaTe2 through XCl2 (X = Cd, Zn) doping-driven band and defect engineering

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Article information

Article type
Paper
Submitted
25 Nov 2024
Accepted
31 Dec 2024
First published
01 Jan 2025

J. Mater. Chem. A, 2025,13, 4380-4389

Simultaneously boosting electrical and thermal transport properties of CuGaTe2 through XCl2 (X = Cd, Zn) doping-driven band and defect engineering

S. Luo, J. Liang, Z. Wei, Y. Du, L. Lv, Y. Jiang, S. Zheng, W. Song and Z. Zhang, J. Mater. Chem. A, 2025, 13, 4380 DOI: 10.1039/D4TA08348B

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