Issue 58, 2025

Insights into electric- and thermal-induced decomposition and gas evolution of silicone rubber through experiments and molecular simulations

Abstract

This study investigates the degradation state of silicone rubber (SiR) under electric and thermal fields by analyzing its gas-evolution characteristics. The goal is to provide a new diagnostic approach for high-voltage cable accessories. Thermogravimetry-infrared spectroscopy (TG-IR) was used to trace the thermal decomposition products. Electrical breakdown was simulated through discharge experiments. Density functional theory (DFT) calculations and reactive force field (ReaxFF) molecular dynamics simulations were employed to verify the reaction mechanisms and decomposition pathways. The results show that under electric field, SiR mainly produces CH4, C2H2, and silane (SiH4), accompanied by CO and CO2. Under thermal field, the main products are CH2O, CH4, hexamethylcyclotrisiloxane (D3), and octamethylcyclotetrasiloxane (D4), along with oxidative gases such as CO2. Molecular simulations revealed differences in microscopic decomposition pathways. A normalized infrared spectral database was also established based on DFT calculations. Overall, this work links macroscopic gas-evolution behavior with microscopic mechanisms and diagnostic applications. It systematically elucidates the decomposition behavior of SiR under electric and thermal fields and provides a theoretical foundation for gas-infrared-based fault diagnosis in cable accessories.

Graphical abstract: Insights into electric- and thermal-induced decomposition and gas evolution of silicone rubber through experiments and molecular simulations

Supplementary files

Article information

Article type
Paper
Submitted
29 Sep 2025
Accepted
27 Nov 2025
First published
15 Dec 2025
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2025,15, 50337-50345

Insights into electric- and thermal-induced decomposition and gas evolution of silicone rubber through experiments and molecular simulations

J. Gong, Q. Zhao, J. Huang, Z. Ye, Z. Wang, Y. Chen and W. Gong, RSC Adv., 2025, 15, 50337 DOI: 10.1039/D5RA07405C

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