Issue 43, 2025, Issue in Progress

First-principles study on enhancing the photocatalytic hydrogen evolution performance in Cs3Bi2I9/MoS2 heterostructure with interfacial defect engineering

Abstract

Hydrogen has been attracting continuously growing interest as a highly efficient and clean energy source for replacing fossil fuels in the future, and thus developing highly efficient photocatalytic materials for hydrogen evolution is much desirable. In this work, we study the structural, electronic and optical properties of heterostructures composed of the bismuth-based vacancy-ordered iodide double perovskite Cs3Bi2I9 and a two-dimensional dichalcogenide 2H-MoS2 monolayer without and with a vacancy defect using first-principles calculations. Our calculations demonstrate that the Cs3Bi2I9/MoS2 heterostructures are energetically stable and induce an interfacial dipole moment, which is beneficial for the prevention of charge carrier recombination. Due to the proper band-edge alignment and the smallest Gibbs free energy difference for hydrogen adsorption, the defective interface with a Cs-vacancy (VCs) is found to be the most promising for photocatalytic hydrogen evolution. Moreover, we find that the interfacial VCs defect can be formed favourably under the I-rich/Cs-poor condition, where VI and VS formations are suppressed. This work provides a way to develop high-performance photocatalysts based on heterostructures composed of the Bi-based halide perovskites and transition metal dichalcogenides for hydrogen evolution from solar-driven water splitting.

Graphical abstract: First-principles study on enhancing the photocatalytic hydrogen evolution performance in Cs3Bi2I9/MoS2 heterostructure with interfacial defect engineering

Supplementary files

Article information

Article type
Paper
Submitted
22 Jul 2025
Accepted
05 Sep 2025
First published
02 Oct 2025
This article is Open Access
Creative Commons BY license

RSC Adv., 2025,15, 36607-36617

First-principles study on enhancing the photocatalytic hydrogen evolution performance in Cs3Bi2I9/MoS2 heterostructure with interfacial defect engineering

K. Kim, Y. Kim, D. Hyon, C. Ri and C. Yu, RSC Adv., 2025, 15, 36607 DOI: 10.1039/D5RA05294G

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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