Issue 49, 2025, Issue in Progress

High-TMR iron-free double-barrier MTJs with MoTe2 spacing for label-free magnetic biosensors

Abstract

Double-barrier magnetic tunnel junctions (DB-MTJs) present a promising platform for biosensing applications due to their improved sensitivity and capability for label-free, non-invasive detection. This work models a high-performance iron-free DB-MTJ configuration: Co2MnSi–MgO–MoTe2–MgO–Co2MnSi. By Utilizing density functional theory (DFT) and the nonequilibrium Green's function (NEGF) technique, we computed the tunnelling magnetoresistance (TMR) ratio, transmission spectra, density of states (DOS), and bandgaps for the Co2MnSi–MgO–MoTe2–MgO–Co2MnSi system. The DB-MTJ features iron-free Co2MnSi Heusler alloy electrodes and a MoTe2 transition metal dichalcogenide (TMDC) spacer, achieving a tunneling magnetoresistance (TMR) ratio of 1226%, alongside other configurations with TMR ratios ranging from 22% to 667%. The high TMR, driven by the tunable electronic properties of MoTe2 and the half-metallic nature of Co2MnSi, enables exceptional sensitivity to interfacial modifications, making it ideal for detecting biomarkers. The application of iron-free materials increases the electrodes' stability and spin polarization and improves the sensitivity of the DB-MTJs upon interface variations. This research points out the high-potential applications of Heusler-based and iron-free DB-MTJ's as sensitive and label-free biosensors.

Graphical abstract: High-TMR iron-free double-barrier MTJs with MoTe2 spacing for label-free magnetic biosensors

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Article information

Article type
Paper
Submitted
11 Jul 2025
Accepted
08 Sep 2025
First published
28 Oct 2025
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2025,15, 41330-41339

High-TMR iron-free double-barrier MTJs with MoTe2 spacing for label-free magnetic biosensors

T. Azargoshasb, P. Kamkar and H. Heidari, RSC Adv., 2025, 15, 41330 DOI: 10.1039/D5RA04973C

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