Issue 40, 2025, Issue in Progress

A ternary Li3B7Si3 cluster: when reduced electron delocalization enhances thermodynamic stability

Abstract

The stability and electronic structure of B7Si3q (q = +, 0, −, 2− and 3−), Li3B7Si3 and Li3B10H3 clusters have been investigated through a comprehensive isomer search, with a focus on the perfect triangular planar isomer T+ of B7Si3+. Despite its double aromaticity, this form is thermodynamically unstable. Two strategies for the stabilization of the triangular form are proposed: (i) sequential addition of σ electrons and (ii) incorporation of Li atoms to reduce excessive negative charge. The former reveals that the addition of up to four electrons gradually improves its stability, with T2− being the most favourable isomer in this charged state. The latter strategy leads to the star form emerging as a global minimum of the ternary Li3B7Si3 cluster, which is significantly more stable. To elucidate the origin of these stabilizations, ring current maps and AdNDP, ELFσ and ETS-NOCV analyses were employed. Results show a shift from the dominant σ aromaticity in T+ to a more balanced σ–π aromatic character in Li3B7Si3, akin to benzene. The AdNDP analysis reveals that T+ possesses four σ delocalized bonds, whereas Li3B7Si3 contains only three, serving as one of the indicators of reduced σ-delocalization. ELFσ analysis further revealed an enhanced peripheral σ delocalization in Li3B7Si3, highlighting the critical role of edge-localized electrons in stabilizing planar aromatic clusters.

Graphical abstract: A ternary Li3B7Si3 cluster: when reduced electron delocalization enhances thermodynamic stability

Supplementary files

Article information

Article type
Paper
Submitted
10 Jul 2025
Accepted
02 Sep 2025
First published
17 Sep 2025
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2025,15, 33844-33853

A ternary Li3B7Si3 cluster: when reduced electron delocalization enhances thermodynamic stability

L. V. Duong, P. A. Pham-Tran, M. Chwastyk, M. P. Pham-Ho and M. T. Nguyen, RSC Adv., 2025, 15, 33844 DOI: 10.1039/D5RA04954G

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