Issue 32, 2025, Issue in Progress

Doping-induced performance optimization in monolayer WS2 memristor: reduced variability and contact resistance

Abstract

The memristor is a cornerstone for developing novel non-volatile memory devices that enable brain-like efficient processing and storage capabilities. Two-dimensional transition metal dichalcogenide (TMDC)-based memristors are gaining increasing attention due to the advantages they present over their bulk counterparts. In this work, we employed first-principles calculations to demonstrate that dopants play a significant role in reducing the cycle-to-cycle variability and in lowering the contact resistance in monolayer WS2-based memristor. The possibility of reduced cycle-to-cycle variability is reflected by the attractive nature of the calculated interaction energy between dopant metal atoms and a sulphur monovacancy in the WS2 monolayer. The potential for reduced contact resistance is evident from the reduced tunneling barrier heights and increased tunneling probabilities at the electrode/WS2 interface upon doping. Additionally, extra states are found to appear in the density of states upon doping, which can prove useful for adjusting the conductance of a doped WS2-based memristor as required. Finally, the obtained features are used to outline dopant selection criteria based on the valence electron configuration of dopants. The obtained characteristics and outlined criteria can serve as guidelines for the future design of optimized WS2-based memristive devices, possessing lower contact resistance and reduced variation in device performance.

Graphical abstract: Doping-induced performance optimization in monolayer WS2 memristor: reduced variability and contact resistance

Supplementary files

Article information

Article type
Paper
Submitted
09 Apr 2025
Accepted
15 Jul 2025
First published
22 Jul 2025
This article is Open Access
Creative Commons BY license

RSC Adv., 2025,15, 26052-26064

Doping-induced performance optimization in monolayer WS2 memristor: reduced variability and contact resistance

T. T. Tanisha, O. Hassan and Md. K. Alam, RSC Adv., 2025, 15, 26052 DOI: 10.1039/D5RA02473K

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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