Low-temperature, in situ growth of graphene via the active hexatomic aromatic ring species of dissociated α-naphthol

Abstract

Using small-molecule carbon sources such as α-naphthol, graphene (Gr) can be generated at relatively low temperatures (600 °C). By optimizing factors such as raw materials, carbon source concentration, growth temperature, and time, the few layers and high-quality Gr on copper (Cu) substrates is achieved, and the properties of Gr are analyzed. Pretreatment of the Cu substrates can enhance the smoothness and flatness of the Cu surface, thereby promoting uniform adsorption of carbon sources and continuous growth of a Gr layer. As the concentration of carbon sources or the growth temperature increases, although the decomposition rate of the carbon source accelerates and ensures adequate carbon supply, the formation of more defects can occur. A deep analysis is provided on the nucleation and growth processes of Gr prepared using the α-naphthol precursor, unveiling the dissociation pathway of α-naphthol and the roles of intermediate active aromatic species with two hexatomic rings in nucleating and assembling the Gr lattice.