Low-dielectric benzocyclobutenyl polysiloxane resin: spatial structure design and photosensitive patterning performance

Abstract

With the development of miniaturization and the high integration of semiconductor devices, higher performance requirements are put forward for polymer photoresists. In this paper, a benzocyclobutene-based polysiloxane photosensitive resin was prepared by sol–gel method, which was well patterned and cured quickly after UV light curing, with a minimum line width and line spacing of 10 μm. The benign combination of benzocyclobutene group (BCB) and polysiloxane in the resin makes the resin exhibit good low dielectric properties (k = 2.79) and excellent thermal properties and mechanical properties, which is different from traditional thermosetting resins.