Issue 17, 2025, Issue in Progress

First-principles design of GaN–VHC (H = Cl, Br; C = Se, Te) van der Waals heterostructures for advanced optoelectronic applications

Abstract

In this study, we examine the structural, optoelectronic, and photocatalytic properties of GaN-based van der Waals heterostructures (vdWHs) that incorporate halogens (Cl, Br) and chalcogens (Se, Te). Using first-principles calculations based on density functional theory, we analyze six different stacking configurations of these heterostructures. Our results show that the GaN–VHC vdWHs (where H = Cl, Br and C = Se, Te) are both dynamically and energetically stable. For solar cell applications, the GaN–VHSe heterostructures exhibit a direct type-I band alignment, while the GaN–VHTe structures show an indirect type-I band alignment. All GaN–VHC heterostructures display strong optical peaks across the visible, infrared, and ultraviolet regions, highlighting their potential for optoelectronic applications. We investigated the photocatalytic potential of these heterostructures and found that GaN–VClSe performs water splitting at pH = 0. While model I and model II can facilitate water splitting, and mainly support reduction at pH = 0 and oxidation at pH = 7. However, their type-I band alignment inherently limits overall photocatalytic activity.

Graphical abstract: First-principles design of GaN–VHC (H = Cl, Br; C = Se, Te) van der Waals heterostructures for advanced optoelectronic applications

Supplementary files

Article information

Article type
Paper
Submitted
18 Nov 2024
Accepted
31 Mar 2025
First published
23 Apr 2025
This article is Open Access
Creative Commons BY license

RSC Adv., 2025,15, 13076-13085

First-principles design of GaN–VHC (H = Cl, Br; C = Se, Te) van der Waals heterostructures for advanced optoelectronic applications

S. Ahmad, S. S. Ullah, H. Ud Din, I. Piyanzina and C. Q. Nguyen, RSC Adv., 2025, 15, 13076 DOI: 10.1039/D4RA08190K

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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