Organic-Inorganic Hybrid Halide Perovskites for Field-Effect Transistors

Abstract

Organic-inorganic hybrid halide perovskites exhibit exceptional properties, including prolonged charge carrier lifetimes, high photoluminescence quantum efficiency, and remarkable defect tolerance, demonstrating significant potential in optoelectronic applications like photoelectric detectors, light-emitting devices, and solar cells. Despite the high intrinsic carrier mobilities, their application in field-effect transistors (FETs) has not been well investigated. Three critical challenges currently hinder the development of high-performance hybrid halide perovskite FETs: ion migration, bulk/interfacial defects, and material instability. In the past few years, the application of halide perovskites as FET channel material has been actively advancing, not only for the development of high-performance FETs showing stunningly improved mobilities, but also to fundamentally investigate charge transport mechanisms and structure-property relationships. This article comprehensively reviews recent progress in three-dimensional (3D) and two-dimensional (2D) organic-inorganic hybrid halide perovskite-based FETs. We discuss achievements and current challenges regarding device performance and stability issues of such hybrid materials and provide a general perspective on breaking through their bottlenecks and exploring future directions.