Expression of concern: A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation

Hyeong Pil Kim; Maria Vasilopoulou; Habib Ullah; Salma Bibi; Anderson Emanuel Ximim Gavim; Andreia Gerniski Macedo; Wilson Jose da Silva; Fabio Kurt Schneider; Asif Ali Tahir; Mohd Asri Mat Teridi; Peng Gao; Abd. Rashid bin Mohd Yusoff; Mohammad Khaja Nazeeruddin

doi:10.1039/D5NR90064F

Expression of concern: A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation

Hyeong Pil Kim,^a Maria Vasilopoulou,*^b Habib Ullah,^c Salma Bibi,^c Anderson Emanuel Ximim Gavim,^d Andreia Gerniski Macedo,^d Wilson Jose da Silva,^d Fabio Kurt Schneider,^d Asif Ali Tahir,^c Mohd Asri Mat Teridi,^e Peng Gao,^f Abd. Rashid bin Mohd Yusoff*^g and Mohammad Khaja Nazeeruddin*^h

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* Corresponding authors

^a Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701, South Korea

^b Institute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, 15341 Agia Paraskevi, Attica, Greece
E-mail: m.vasilopoulou@inn.demokritos.gr

^c Environment and Sustainability Institute, University of Exeter, Penryn Campus, Penryn, Cornwall TR10 9FE, UK

^d Universidade Tecnológica Federal do Parana–Av. Sete de Setembro, 3165-CEP 80230-901, Curitiba, Parana, Brazil

^e Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia

^f CAS Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
E-mail: peng.gao@fjirsm.ac.cn

^g Department of Physics, Swansea University, Vivian Tower, Singleton Park, SA2 8PP, Swansea, UK
E-mail: a.r.mohdyusoff@swansea.ac.uk

^h Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Rue de l'Industrie 17, CH-1951 Sion, Switzerland
E-mail: mdkhaja.nazeeruddin@epfl.ch

Abstract

Expression of concern for ‘A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation’ by Hyeong Pil Kim et al., Nanoscale, 2020, 12, 7641–7650, https://doi.org/10.1039/C9NR10745B.

Nanoscale

Expression of concern: A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation

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Expression of concern: A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation

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