We report on the impact of impurity doping on the performance enhancement of silicon quantum dot (SiQD) light-emitting diodes. The increase in hole mobility resulting from boron doping increases the external quantum efficiency of electroluminescence by a factor of 12 and the optical power density by a factor of 2.65.
H. Yamada, T. Nagao and N. Shirahata, Nanoscale Adv., 2025, Advance Article , DOI: 10.1039/D5NA00349K
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