Improving the performance of floating gate phototransistor memory with perovskite nanocrystals embedded in fluorinated polyamic acids

Abstract

This study aims to develop a hybrid material using fluorine-containing polyamic acid (PAA) polymers and a perovskite (PVSK) for application in transistor-based photomemory devices to enhance both structural and electrical performance. Adding fluorides to the PAA material creates a structure with Lewis acid–base interactions, improving the interface between PVSK and PAA, reducing defect density in the floating gate dielectric layer, and passivating grain defects. Furthermore, the hydrophobic PAA structure provides an improved crystalline nucleation interface for the semiconductor pentacene, thereby significantly enhancing the hole mobility of the transistor. In electrical performance tests, devices utilizing ODA–6FDA (poly(4,4′-diaminodiphenyl ether-alt-4,4′-(hexafluoroisopropylidene)diphthalic anhydride)) as the floating gate exhibited a superior ON/OFF current ratio, approaching 10⁶, compared to other PAA materials, and demonstrated stable dynamic switching currents. Additionally, incorporating fluorides into the PVSK material resulted in a more stable memory window, enabling the devices to maintain excellent performance during cyclic operation and long-term storage stability tests. These findings highlight the potential of combining fluorinated polymers with PVSK materials, further advancing the development and application of optoelectronic materials.