Synergistic surface doping of organic crystals with source-gated architectures: ultra-stable, high-mobility and strain-insensitive stretchable transistors

Abstract

Despite remarkable advancements in organic flexible electronics, performance variability and operational instability, rooted in weak van der Waals interaction correlated defects, remain long-standing challenges. Herein, we address these issues through a synergistic strategy integrating organic single crystals, surface doping, and source-gated transistors (SGTs). FTS ((tridecafluoro-1,1,2,2-tetrahydrooctyl)trichlorosilane) monolayer decoration contributes to a trap-free and high-conductance (11.1 ± 0.2 μS) crystal surface. Combined with the unique charge depletion mode of SGTs, record-high mobilities of 23.7 cm² V⁻¹ s⁻¹ are achieved, with a reduced device-to-device mobility variation of 3.9% across 50 samples vs. 42.7% in FETs. Crucially, doped SGTs exhibit 98% performance retention under 100% relative humidity for 7 hours, improved bias stability (1.2% degradation at 100 Hz over 100 s), and negligible current alteration in bending/stretching tests. Our research provides a unique approach to design robust and high-performance devices, advancing the reliability of organic electronics in flexible driving circuits.