Issue 5, 2025

Pressure-induced multi-functional property analysis of lead-free tin based halide perovskites ASnCl3 (A = Ga, In, Tl) for advanced optoelectronic applications

Abstract

This work examines the structural, electrical, and optical characteristics of lead-free tin-based halide perovskites, ASnCl3 (A = Ga, In, and Tl), as environmentally friendly substitutes for lead-based perovskites in solar applications. Hydrostatic pressures ranging from 0 to 8 GPa cause all three compounds – GaSnCl3, InSnCl3, and TlSnCl3 – to display a 3D-cubic perovskite structure. When pressure is applied, lattice parameters and unit cell volumes decrease as follows. For GaSnCl3, they decrease from 5.554 Å and 171.346 A3 to 5.161 Å and 137.515 A3; for InSnCl3, they are from 5.568 Å and 172.623 A3 to 5.178 Å and 138.891 A3; and for TlSnCl3, they are from 5.573 Å and 173.146 A3 to 5.184 Å and 139.352 A3. This suggests that the structure is stable under compression. These compound's formation enthalpies attest to their thermodynamic stability over the investigated pressure range. All three Sn-based compounds exhibit a direct bandgap at 0 GPa, and as pressure increases the band gap decreases, which suggests a tunable electronic structure. TlSnCl3 demonstrates a significant change from semiconductor to metallic behavior at higher pressures. The optical absorption spectra of the materials shift towards longer wavelengths (redshift) as pressure increases, enhancing the light absorption capabilities of these compounds. The compounds exhibit enhanced mechanical stability and ductility with increasing pressure, as indicated by their bulk, shear, and Young's modulus. Poisson's ratio values for these materials are in the range of 0.372 to 0.441 for GaSCl3, 0.355 to 0.418 for InSnCl3, and 0.349 to 0.413 for TlSnCl3, which highlights their ductile nature. GaSnCl3, InSnBr3, and TlSnCl3 exhibit diamagnetic behavior both under normal conditions and with increased pressure. Thermal conductivity and stability are enhanced with increased pressure, making these materials suitable for high-temperature applications. The ability to tune the properties of these compounds through pressure makes them promising candidates for next-generation optoelectronic devices, energy storage, and conversion systems.

Graphical abstract: Pressure-induced multi-functional property analysis of lead-free tin based halide perovskites ASnCl3 (A = Ga, In, Tl) for advanced optoelectronic applications

Supplementary files

Article information

Article type
Paper
Submitted
15 Jan 2025
Accepted
05 Feb 2025
First published
06 Feb 2025
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2025,6, 1794-1821

Pressure-induced multi-functional property analysis of lead-free tin based halide perovskites ASnCl3 (A = Ga, In, Tl) for advanced optoelectronic applications

Md. R. Hasan, I. A. Apon, Md. M. Islam, A. U. Azad, Md. Solayman and Md. S. Haque, Mater. Adv., 2025, 6, 1794 DOI: 10.1039/D5MA00039D

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