Vertical p-GaN/n-Ga2O3 heterojunction diode with high switching performance

Abstract

Although the forward current–voltage characteristics and breakdown voltage performance of GaN/Ga₂O₃ p–n diodes have been extensively studied, there have been no reports on their reverse recovery characteristics. This paper investigates the reverse recovery behavior of p-GaN/n-Ga₂O₃ diodes and examines the effects of temperature, forward current magnitude, and doping concentration on their performance. In the simulations of the switching process, a reverse voltage (V_R) of −10 V and a forward current (I_F) of 3 A were applied. The p-GaN/n-Ga₂O₃ diode demonstrated fast reverse recovery, achieving a reverse recovery time (t_rr) of 72 ns, outperforming 6H-SiC p–n diodes under identical dI/dt conditions. Notably, the reverse recovery characteristics of the p-GaN/n-Ga₂O₃ diode remained stable across varying temperatures and forward current levels. Additionally, a high breakdown voltage of 703 V was achieved at 300 K, maintaining stability across different temperatures. These findings highlight the potential of p-GaN/n-Ga₂O₃ heterojunction diodes for high-voltage, fast-switching applications.